Laser crystallization of compensated hydrogenated amorphous silicon thin films

Rosari Saleh, N. H. Nickel, K. v. Maydell

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Raman backscattering and hydrogen effusion measurements were performed on compensated, highly P- and B-doped laser crystallized polycrystalline silicon. From hydrogen effusion spectra the hydrogen chemical potential, μH, is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. Interestingly, hydrogen bonding is affected by doping of the amorphous starting material. Below the hydrogen transport states, four peaks are observed in the hydrogen density-of-states at 2.0, 2.2, 2.5 and 2.8 eV. The latest peak is not observed in B-doped samples. The hydrogen effusion results will be correlated with the results obtained from Raman backscattering measurements.

Original languageEnglish
Pages (from-to)1003-1007
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2006

Keywords

  • Crystal growth
  • Lasers
  • Raman spectroscopy
  • Silicon

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