Abstract
Raman backscattering and hydrogen effusion measurements were performed on compensated, highly P- and B-doped laser crystallized polycrystalline silicon. From hydrogen effusion spectra the hydrogen chemical potential, μH, is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. Interestingly, hydrogen bonding is affected by doping of the amorphous starting material. Below the hydrogen transport states, four peaks are observed in the hydrogen density-of-states at 2.0, 2.2, 2.5 and 2.8 eV. The latest peak is not observed in B-doped samples. The hydrogen effusion results will be correlated with the results obtained from Raman backscattering measurements.
Original language | English |
---|---|
Pages (from-to) | 1003-1007 |
Number of pages | 5 |
Journal | Journal of Non-Crystalline Solids |
Volume | 352 |
Issue number | 9-20 SPEC. ISS. |
DOIs | |
Publication status | Published - 15 Jun 2006 |
Keywords
- Crystal growth
- Lasers
- Raman spectroscopy
- Silicon