TY - JOUR
T1 - Junction properties and conduction mechanism of new terbium complexes with triethylene glycol ligand for potential application in organic electronic device
AU - Za'Aba, N. K.
AU - Sarjidan, M. A.Mohd
AU - Majid, W. H.Abd
AU - Kusrini, Eny
AU - Saleh, Muhammad I.
N1 - Funding Information:
Foundation item: Project supported by University Malaya and Ministry of Higher Education Malaysia under grant (KPT 1059-2012), Science Fund (SF019-2013) and Fundamental Research Grant Scheme (FP033-2013B)
PY - 2014/7
Y1 - 2014/7
N2 - Terbium-picrate triethylene glycol (EO3-Tb-Pic) complex was prepared in thin film and single layer device structure of ITO/EO3-Tb-Pic/Al, using spin coating technique. The UV-Vis absorption spectroscopy analysis was performed to evaluate the electronic molecular transition of the complex. The optical band gap, Eg estimated from the Tauc model revealed that EO3-Tb-Pic thin film exhibited a direct transition with Eg of 2.70 eV. The electronic parameters of the ITO/EO3-Tb-Pic/Al device such as the ideality factor n, barrier height Φb, saturation current Io, and series resistance Rs, were extracted from the conventional lnI-V, Cheung's functions and Norde's method. It was found that the evaluated parameters calculated from Norde's and Cheung's methods were consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plot, three distinct regions based on the slope were identified, and the conduction mechanisms were discussed and explained. The mobility, μ value was estimated from SCLC region as 2.58×10-7 cm2/(V·s). This newly obtained lanthanide complex may be potentially utilized in electronic devices.
AB - Terbium-picrate triethylene glycol (EO3-Tb-Pic) complex was prepared in thin film and single layer device structure of ITO/EO3-Tb-Pic/Al, using spin coating technique. The UV-Vis absorption spectroscopy analysis was performed to evaluate the electronic molecular transition of the complex. The optical band gap, Eg estimated from the Tauc model revealed that EO3-Tb-Pic thin film exhibited a direct transition with Eg of 2.70 eV. The electronic parameters of the ITO/EO3-Tb-Pic/Al device such as the ideality factor n, barrier height Φb, saturation current Io, and series resistance Rs, were extracted from the conventional lnI-V, Cheung's functions and Norde's method. It was found that the evaluated parameters calculated from Norde's and Cheung's methods were consistent with those calculated from the conventional I-V method. In the double logarithmic I-V plot, three distinct regions based on the slope were identified, and the conduction mechanisms were discussed and explained. The mobility, μ value was estimated from SCLC region as 2.58×10-7 cm2/(V·s). This newly obtained lanthanide complex may be potentially utilized in electronic devices.
KW - terbium-picrate complex triethylene glycol Tauc model optical band gap current-voltage rare earths
UR - http://www.scopus.com/inward/record.url?scp=84903986275&partnerID=8YFLogxK
U2 - 10.1016/S1002-0721(14)60119-8
DO - 10.1016/S1002-0721(14)60119-8
M3 - Article
AN - SCOPUS:84903986275
SN - 1002-0721
VL - 32
SP - 633
EP - 640
JO - Journal of Rare Earths
JF - Journal of Rare Earths
IS - 7
ER -