Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

S. Iwan, J. L. Zhao, S. T. Tan, Bambang Soegijono, M. Hikam, H. M. Fan, X. W. Sun

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias.

Original languageEnglish
Pages (from-to)263-266
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume30
DOIs
Publication statusPublished - 1 Jan 2015

Keywords

  • Electron impact excitation
  • Heterojunction
  • LEDs
  • Rare earths
  • Reverse-biased
  • ZnO

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