Investigation of structural, morphological and optical properties of GaN/AlGaN heterostructures on Si

Irma Saraswati, Nr Poepawati, Retno Wigajatri Purnamaningsih, Elhadj Dogheche, Didier Decoster, S. Ko, Y. H. Cho, L. Considine, D. Pavlidis

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

A good justification for gallium nitride on silicone is the potential for integrated optoelectronic circuits and for the low cost bring by growth of GaN on a large size wafers. Actually, the application interest for GaN/Si is power electronics. This work focused on the optimization of the growth process for GaN/Si and the relation between the structure and the optical properties. Using the guided wave prism coupling technique, we have fully established the index dispersion of GaN at room temperature and its temperature dependence in the wavelength range 0.4 to 1.5μm. We report a slightly low temperature dependence. Results demonstrated excellent waveguide properties of GaN on silicon with optical propagation loss below 1dB/cm. We compared trhe results on Si with those on sapphire. This opens a real opportunity of future device using this technology.

Original languageEnglish
Title of host publication2012 Photonics Global Conference, PGC 2012
DOIs
Publication statusPublished - 1 Dec 2012
Event2012 Photonics Global Conference, PGC 2012 - Singapore, Singapore
Duration: 13 Dec 201216 Dec 2012

Publication series

Name2012 Photonics Global Conference, PGC 2012

Conference

Conference2012 Photonics Global Conference, PGC 2012
CountrySingapore
CitySingapore
Period13/12/1216/12/12

Keywords

  • gallium nitride
  • microstructure
  • refractive index
  • silicon
  • temperature dependence

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