Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering

R. Saleh; L. Munisa; W. Beyer

doi:10.1016/S0040-6090(03)00003-8

Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering

R. Saleh, L. Munisa, W. Beyer

Department of Physics

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the Si-H stretching absorption from 2000 to 2100 cm^-1 with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of Si-H stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm^-1 absorptions are due to C-Si stretching vibrations with the 720 cm^-1 absorption presumably related to H-Si-C groups. Under the deposition condition applied, these H-Si-C groups are the predominant sites for hydrogen and carbon incorporation.

Original language	English
Pages (from-to)	117-123
Number of pages	7
Journal	Thin Solid Films
Volume	426
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00003-8
Publication status	Published - 24 Feb 2003

Keywords

Amorphous materials
Hydrogen
Infrared spectroscopy
Sputtering

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10.1016/S0040-6090(03)00003-8

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@article{bab4af037dc741cc8f2ebcbc3637c621,

title = "Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering",

abstract = "Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the Si-H stretching absorption from 2000 to 2100 cm-1 with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of Si-H stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm-1 absorptions are due to C-Si stretching vibrations with the 720 cm-1 absorption presumably related to H-Si-C groups. Under the deposition condition applied, these H-Si-C groups are the predominant sites for hydrogen and carbon incorporation.",

keywords = "Amorphous materials, Hydrogen, Infrared spectroscopy, Sputtering",

author = "R. Saleh and L. Munisa and W. Beyer",

note = "Funding Information: The authors thank M. Gebauer, A. Dahmen and W. Michelsen for the ion implantations. This work was supported in part by funds of bilateral collaboration programs of the International Bureau of BMBF (Germany) with Universitas Indonesia (Indonesia). R.S. and L.M. acknowledge financial support by University Research Graduate Education Project (URGE Project) under contract 005/HTPP-III/URGE/ 1997 (Indonesia).",

year = "2003",

month = feb,

day = "24",

doi = "10.1016/S0040-6090(03)00003-8",

language = "English",

volume = "426",

pages = "117--123",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering

AU - Saleh, R.

AU - Munisa, L.

AU - Beyer, W.

N1 - Funding Information: The authors thank M. Gebauer, A. Dahmen and W. Michelsen for the ion implantations. This work was supported in part by funds of bilateral collaboration programs of the International Bureau of BMBF (Germany) with Universitas Indonesia (Indonesia). R.S. and L.M. acknowledge financial support by University Research Graduate Education Project (URGE Project) under contract 005/HTPP-III/URGE/ 1997 (Indonesia).

PY - 2003/2/24

Y1 - 2003/2/24

N2 - Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the Si-H stretching absorption from 2000 to 2100 cm-1 with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of Si-H stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm-1 absorptions are due to C-Si stretching vibrations with the 720 cm-1 absorption presumably related to H-Si-C groups. Under the deposition condition applied, these H-Si-C groups are the predominant sites for hydrogen and carbon incorporation.

AB - Infrared absorption and hydrogen effusion were measured on silicon rich a-SiC:H films deposited by d.c. sputtering. Hydrogen concentration was changed by hydrogen implantation. The results show that the shift of the Si-H stretching absorption from 2000 to 2100 cm-1 with increasing carbon concentration is mainly due to hydrogen-related void formation. The absorption strength of Si-H stretching and wagging absorptions are found to be independent of carbon concentration. The data suggest that both 720 and 780 cm-1 absorptions are due to C-Si stretching vibrations with the 720 cm-1 absorption presumably related to H-Si-C groups. Under the deposition condition applied, these H-Si-C groups are the predominant sites for hydrogen and carbon incorporation.

KW - Amorphous materials

KW - Hydrogen

KW - Infrared spectroscopy

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=0037463265&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(03)00003-8

DO - 10.1016/S0040-6090(03)00003-8

M3 - Article

AN - SCOPUS:0037463265

SN - 0040-6090

VL - 426

SP - 117

EP - 123

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Infrared absorption in a-SiC:H alloy prepared by d.c. sputtering

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Keywords

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