Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

S. D. Baranovskii, Rosari Saleh, P. Thomas, H. Vaupel, H. Fritzsche

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The influence of nonradiative and nongeminate radiative processes on the lifetime distribution of photoexcited carriers is studied in a simple computer simulation. The lifetime distribution was simulated recently for geminate radiative processes, and turned out to be much broader than that observed by experiment. The aim of the present simulation is to clarify whether nonradiative or nongeminate radiative processes could lead to the observed narrowing of the distribution. The results show that nonradiative processes lead to a narrowing only with an appreciable and unrealistic shift of the distribution to shorter times. Nongeminate radiative processes lead to a narrowing of the distribution with a weaker and more reasonable shift.

Original languageEnglish
Pages (from-to)567-570
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
Publication statusPublished - 1 Jan 1991

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