Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

S. D. Baranovskii; Rosari Saleh; P. Thomas; H. Vaupel; H. Fritzsche

doi:10.1016/S0022-3093(05)80181-4

Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

S. D. Baranovskii, Rosari Saleh, P. Thomas, H. Vaupel, H. Fritzsche

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The influence of nonradiative and nongeminate radiative processes on the lifetime distribution of photoexcited carriers is studied in a simple computer simulation. The lifetime distribution was simulated recently for geminate radiative processes, and turned out to be much broader than that observed by experiment. The aim of the present simulation is to clarify whether nonradiative or nongeminate radiative processes could lead to the observed narrowing of the distribution. The results show that nonradiative processes lead to a narrowing only with an appreciable and unrealistic shift of the distribution to shorter times. Nongeminate radiative processes lead to a narrowing of the distribution with a weaker and more reasonable shift.

Original language	English
Pages (from-to)	567-570
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-3093(05)80181-4
Publication status	Published - 1991

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title = "Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures",

abstract = "The influence of nonradiative and nongeminate radiative processes on the lifetime distribution of photoexcited carriers is studied in a simple computer simulation. The lifetime distribution was simulated recently for geminate radiative processes, and turned out to be much broader than that observed by experiment. The aim of the present simulation is to clarify whether nonradiative or nongeminate radiative processes could lead to the observed narrowing of the distribution. The results show that nonradiative processes lead to a narrowing only with an appreciable and unrealistic shift of the distribution to shorter times. Nongeminate radiative processes lead to a narrowing of the distribution with a weaker and more reasonable shift.",

author = "Baranovskii, {S. D.} and Rosari Saleh and P. Thomas and H. Vaupel and H. Fritzsche",

note = "Funding Information: ACKNOWLEDGEMENTS We are grateful to B.I. Shklovskii, W. Fuhs, M. Bort, S. Liedtke and R. Stachowitz for useful discussions and for sending us their theoretical and experimental results prior to publication and to R. Heft for his help in calculations. The work was supported by the Alexander yon Humboldt Foundation.",

year = "1991",

doi = "10.1016/S0022-3093(05)80181-4",

language = "English",

volume = "137-138",

pages = "567--570",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

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Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures. / Baranovskii, S. D.; Saleh, Rosari; Thomas, P.; Vaupel, H.; Fritzsche, H.

In: Journal of Non-Crystalline Solids, Vol. 137-138, No. PART 1, 1991, p. 567-570.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

AU - Baranovskii, S. D.

AU - Saleh, Rosari

AU - Thomas, P.

AU - Vaupel, H.

AU - Fritzsche, H.

N1 - Funding Information: ACKNOWLEDGEMENTS We are grateful to B.I. Shklovskii, W. Fuhs, M. Bort, S. Liedtke and R. Stachowitz for useful discussions and for sending us their theoretical and experimental results prior to publication and to R. Heft for his help in calculations. The work was supported by the Alexander yon Humboldt Foundation.

PY - 1991

Y1 - 1991

N2 - The influence of nonradiative and nongeminate radiative processes on the lifetime distribution of photoexcited carriers is studied in a simple computer simulation. The lifetime distribution was simulated recently for geminate radiative processes, and turned out to be much broader than that observed by experiment. The aim of the present simulation is to clarify whether nonradiative or nongeminate radiative processes could lead to the observed narrowing of the distribution. The results show that nonradiative processes lead to a narrowing only with an appreciable and unrealistic shift of the distribution to shorter times. Nongeminate radiative processes lead to a narrowing of the distribution with a weaker and more reasonable shift.

AB - The influence of nonradiative and nongeminate radiative processes on the lifetime distribution of photoexcited carriers is studied in a simple computer simulation. The lifetime distribution was simulated recently for geminate radiative processes, and turned out to be much broader than that observed by experiment. The aim of the present simulation is to clarify whether nonradiative or nongeminate radiative processes could lead to the observed narrowing of the distribution. The results show that nonradiative processes lead to a narrowing only with an appreciable and unrealistic shift of the distribution to shorter times. Nongeminate radiative processes lead to a narrowing of the distribution with a weaker and more reasonable shift.

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U2 - 10.1016/S0022-3093(05)80181-4

DO - 10.1016/S0022-3093(05)80181-4

M3 - Article

AN - SCOPUS:0026415473

VL - 137-138

SP - 567

EP - 570

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - PART 1

ER -

Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

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