Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 1016 cm-3 - 5·1017 cm-3. The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.
|Number of pages||4|
|Journal||Journal of Non-Crystalline Solids|
|Issue number||PART 1|
|Publication status||Published - 2 Dec 1993|