Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H

M. Schubert; R. Stachowitz; R. Saleh; W. Fuhs

doi:10.1016/0022-3093(93)90612-2

Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H

M. Schubert, R. Stachowitz, R. Saleh, W. Fuhs

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 10¹⁶ cm^-3 - 5·10¹⁷ cm^-3. The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

Original language	English
Pages (from-to)	555-558
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(93)90612-2
Publication status	Published - 2 Dec 1993

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title = "Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H",

abstract = "Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 1016 cm-3 - 5·1017 cm-3. The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.",

author = "M. Schubert and R. Stachowitz and R. Saleh and W. Fuhs",

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T1 - Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H

AU - Schubert, M.

AU - Stachowitz, R.

AU - Saleh, R.

AU - Fuhs, W.

N1 - Funding Information: 1This work was supported by the Bundesminister fiir Forschung und Technologie (BMFT) under contract # 0328327F

PY - 1993/12/2

Y1 - 1993/12/2

N2 - Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 1016 cm-3 - 5·1017 cm-3. The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

AB - Non-radiative recombination in a-Si:H is studied by frequency-resolved photoluminescence spectroscopy (FRS) at excitation densities which are known to lead to geminate recombination. The measurements were performed between 4K-100K and the defect density was varied in the range 1016 cm-3 - 5·1017 cm-3. The dependence of the lifetime distribution on the defect density at low temperature is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

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U2 - 10.1016/0022-3093(93)90612-2

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AN - SCOPUS:0027907029

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VL - 164-166

SP - 555

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H

Abstract

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