III-nitride semiconductors based optical power splitter device design for underwater application

Retno Wigajatri Purnamaningsih; Nyi Raden Poespawati; Elhadj Dogheche

doi:10.11591/ijece.v8i5.pp3866-3874

III-nitride semiconductors based optical power splitter device design for underwater application

Retno Wigajatri Purnamaningsih, Nyi Raden Poespawati, Elhadj Dogheche

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, we introduce III-nitrides based 1× 4 optical power splitter for underwater optical communication applications. To the best of our knowledge, this is a first study for the design of multimode interference (MMI) and four-branch taper waveguide based on GaN/sapphire. The microstructure of GaN semiconductor grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire reported. The numerical experimental is conducted using the 3D FD-BPM method. The results showed that the optical power splitter has an excess loss of 0.013 dB and imbalance of 0.17 dB. The results open the opportunity for the future device using this technology for the underwater application.

Original language	English
Pages (from-to)	3866-3874
Number of pages	9
Journal	International Journal of Electrical and Computer Engineering
Volume	8
Issue number	5
DOIs	https://doi.org/10.11591/ijece.v8i5.pp3866-3874
Publication status	Published - 2018

Keywords

FD-BPM method
III-nitrides
MMI structure
Optical power splitter
Taper waveguide

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10.11591/ijece.v8i5.pp3866-3874

Cite this

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title = "III-nitride semiconductors based optical power splitter device design for underwater application",

abstract = "In this paper, we introduce III-nitrides based 1× 4 optical power splitter for underwater optical communication applications. To the best of our knowledge, this is a first study for the design of multimode interference (MMI) and four-branch taper waveguide based on GaN/sapphire. The microstructure of GaN semiconductor grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire reported. The numerical experimental is conducted using the 3D FD-BPM method. The results showed that the optical power splitter has an excess loss of 0.013 dB and imbalance of 0.17 dB. The results open the opportunity for the future device using this technology for the underwater application.",

keywords = "FD-BPM method, III-nitrides, MMI structure, Optical power splitter, Taper waveguide",

author = "Purnamaningsih, {Retno Wigajatri} and Poespawati, {Nyi Raden} and Elhadj Dogheche",

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AU - Purnamaningsih, Retno Wigajatri

AU - Poespawati, Nyi Raden

AU - Dogheche, Elhadj

PY - 2018

Y1 - 2018

N2 - In this paper, we introduce III-nitrides based 1× 4 optical power splitter for underwater optical communication applications. To the best of our knowledge, this is a first study for the design of multimode interference (MMI) and four-branch taper waveguide based on GaN/sapphire. The microstructure of GaN semiconductor grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire reported. The numerical experimental is conducted using the 3D FD-BPM method. The results showed that the optical power splitter has an excess loss of 0.013 dB and imbalance of 0.17 dB. The results open the opportunity for the future device using this technology for the underwater application.

AB - In this paper, we introduce III-nitrides based 1× 4 optical power splitter for underwater optical communication applications. To the best of our knowledge, this is a first study for the design of multimode interference (MMI) and four-branch taper waveguide based on GaN/sapphire. The microstructure of GaN semiconductor grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire reported. The numerical experimental is conducted using the 3D FD-BPM method. The results showed that the optical power splitter has an excess loss of 0.013 dB and imbalance of 0.17 dB. The results open the opportunity for the future device using this technology for the underwater application.

KW - FD-BPM method

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KW - MMI structure

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JO - International Journal of Electrical and Computer Engineering

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III-nitride semiconductors based optical power splitter device design for underwater application

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Keywords

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