Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies

Keyphrases

• Void Growth 100%
• Silicon-carbon 100%
• Effusion 100%
• Hydrogenated Amorphous Silicon 100%
• Diffusion Studies 100%
• Hydrogen-induced 100%
• Carbon Concentration 50%
• Ion Implantation 50%
• Secondary Ion Mass Spectrometry 50%
• Rare Gases 50%
• Rare Gas Atoms 50%
• Alloy Concentration 50%
• DC Magnetron Sputtering 50%
• Hydrogen Incorporation 50%

Material Science

• Amorphous Silicon 100%
• Hydrogen 100%
• Inert Gas 66%
• Void Growth 66%
• Film 33%
• Alloy 33%
• Magnetron Sputtering 33%
• Ion Implantation 33%
• Secondary Ion Mass Spectrometry 33%