Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies

Rosari Saleh, Lusitra Munisa, Wolfhard Beyer

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The void formation in Si-rich a-SiC:H films deposited with dc magnetron sputtering is studied by effusion measurements of hydrogen and of implanted rare gases and secondary ion mass spectrometry (SIMS). Rare gas atoms were incorporated into the material by ion implantation. The results suggest a widening of the network openings with increasing alloy concentration. However, the void formation is mainly attributed not to an increase in carbon concentration but to an increase in hydrogen incorporation.

Original languageEnglish
Pages (from-to)5334-5340
Number of pages7
JournalApplied Surface Science
Volume253
Issue number12
DOIs
Publication statusPublished - 15 Apr 2007

Keywords

  • Amorphous alloys
  • Implantation
  • SIMS

Fingerprint Dive into the research topics of 'Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies'. Together they form a unique fingerprint.

Cite this