Highly linear high isolation SPDT switch IC with back-gate effect and floating body technique in 180-nm CMOS

Xiao Xu, Xin Yang, Zheng Sun, Taufiq Alif Kurniawan, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a broadband single-pole double-throw (SPDT) switch IC in a 180-nm CMOS process. Back-gate voltage injection and floating body technique are utilized to improve the power handling capability, insertion loss and isolation performance, simultaneously. The fabricated SPDT switch IC has exhibited an input referred 0.3-dB compression point of 21.0 dBm, an isolation of 42.7 dB and an insertion loss of 1.1 dB for transmit mode at an operation frequency of 5.0 GHz.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages106-108
Number of pages3
ISBN (Electronic)9781467377942
DOIs
Publication statusPublished - 8 Jan 2016
EventIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan
Duration: 26 Aug 201528 Aug 2015

Publication series

Name2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings

Conference

ConferenceIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
CountryJapan
CitySendai
Period26/08/1528/08/15

Keywords

  • Back-gate effect
  • Broadband
  • Floating body technique
  • High isolation
  • High power handling capability
  • SPDT switch IC

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  • Cite this

    Xu, X., Yang, X., Sun, Z., Kurniawan, T. A., & Yoshimasu, T. (2016). Highly linear high isolation SPDT switch IC with back-gate effect and floating body technique in 180-nm CMOS. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 106-108). [7377902] (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377902