Growth of Cu(In1-xAlx)Se2 thin films by atmospheric pressure selenization of sputtered precursors

Badrul Munir, Rachmat Adhi Wibowo, Eun Soo Lee, Kyoo Ho Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. AU of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages931-934
Number of pages4
EditionPART 2
ISBN (Print)3908451310, 9783908451310
DOIs
Publication statusPublished - 2007
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 10 Sep 200614 Sep 2006

Publication series

NameSolid State Phenomena
NumberPART 2
Volume124-126
ISSN (Print)1012-0394

Conference

ConferenceIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of
CityJeju
Period10/09/0614/09/06

Keywords

  • Selenization
  • Solar cell
  • Sputtering
  • Thin films

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