Growth of Cu(In1-xAlx)Se2 thin films by atmospheric pressure selenization of sputtered precursors

Badrul Munir; Rachmat Adhi Wibowo; Eun Soo Lee; Kyoo Ho Kim

doi:10.4028/3-908451-31-0.931

Growth of Cu(In_1-xAl_x)Se₂ thin films by atmospheric pressure selenization of sputtered precursors

Badrul Munir, Rachmat Adhi Wibowo, Eun Soo Lee, Kyoo Ho Kim

Department of Metallurgical and Material Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

Cu(In_1-xAl_x)Se₂ films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. AU of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se₂ thin films for solar cells applications.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	931-934
Number of pages	4
Edition	PART 2
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.931
Publication status	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 10 Sept 2006 → 14 Sept 2006

Publication series

Name	Solid State Phenomena
Number	PART 2
Volume	124-126
ISSN (Print)	1012-0394

Conference

Conference	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/Territory	Korea, Republic of
City	Jeju
Period	10/09/06 → 14/09/06

Keywords

Selenization
Solar cell
Sputtering
Thin films

Access to Document

10.4028/3-908451-31-0.931

Cite this

Munir, B., Wibowo, R. A., Lee, E. S., & Kim, K. H. (2007). Growth of Cu(In_1-xAl_x)Se₂ thin films by atmospheric pressure selenization of sputtered precursors. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 2 ed., pp. 931-934). (Solid State Phenomena; Vol. 124-126, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.931

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title = "Growth of Cu(In1-xAlx)Se2 thin films by atmospheric pressure selenization of sputtered precursors",

abstract = "Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. AU of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.",

keywords = "Selenization, Solar cell, Sputtering, Thin films",

author = "Badrul Munir and Wibowo, {Rachmat Adhi} and Lee, {Eun Soo} and Kim, {Kyoo Ho}",

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Munir, B, Wibowo, RA, Lee, ES & Kim, KH 2007, Growth of Cu(In_1-xAl_x)Se₂ thin films by atmospheric pressure selenization of sputtered precursors. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 2 edn, Solid State Phenomena, no. PART 2, vol. 124-126, Trans Tech Publications Ltd, pp. 931-934, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 10/09/06. https://doi.org/10.4028/3-908451-31-0.931

Growth of Cu(In_1-xAl_x)Se₂ thin films by atmospheric pressure selenization of sputtered precursors. / Munir, Badrul; Wibowo, Rachmat Adhi; Lee, Eun Soo et al.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 2. ed. Trans Tech Publications Ltd, 2007. p. 931-934 (Solid State Phenomena; Vol. 124-126, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. AU of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

AB - Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. AU of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

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