Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

S. Iwan, S. Bambang, J. L. Zhao, S. T. Tan, H. M. Fan, L. Sun, S. Zhang, H. H. Ryu, X. W. Sun

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films.

Original languageEnglish
Pages (from-to)2721-2724
Number of pages4
JournalPhysica B: Condensed Matter
Issue number14
Publication statusPublished - 15 Jul 2012


  • Electron impact excitation
  • Photoluminescence
  • Room temperature
  • USP
  • ZnO:Er
  • n-ZnO:Er/p-Si heterojunctions


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