TY - JOUR
T1 - Evolution of morphological, crystal structure, and electrical properties of Ba-Pb-Bi-O superconducting materials
AU - Imaduddin, Agung
AU - Herbirowo, Satrio
AU - Nugraha, Heri
AU - Hendrik, Hendrik
AU - Aisatun, Aisatun
AU - Giovanni, Anastasia Ruth
AU - Effendi, Mukhtar
AU - Sari, Kartika
AU - Pramono, Andika Widya
AU - Yuwono, Akhmad Herman
N1 - Funding Information:
The authors would like to thank Elsa BRIN staffs, who helped measure the samples' SEM and XRD. The authors acknowledge the facilities, scientific and technical support from Materials and Metallurgical Characterization Laboratories Serpong, National Research and Innovation Agency (BRIN) through E-Science Service and also financial support from LPDP (Indonesia Endowment Fund for Education) , Ministry of Finance, Republic of Indonesia.
Funding Information:
This research was supported financially by LPDP (Indonesia Endowment Fund for Education) , Ministry of Finance, Republic of Indonesia.
Publisher Copyright:
© 2023
PY - 2023/10
Y1 - 2023/10
N2 - Bismuthate superconductor material has a transition from a semiconductor/conductor to a superconductor. Research on this transition temperature has attracted many researchers' attention to reveal this material's superconducting properties. We synthesized the materials by the solid-state reaction method. Samples were synthesized with variations in sintering temperature and also with variations in Bi-doping. X-ray diffractometer (XRD), scanning electron microscope (SEM), and resistivity versus temperature measurements were used to analyse the crystal structure, morphology, and electrical characteristics, respectively. Based on SEM results, there were no significant changes with the increase in sintering temperature. However, from x = 0 to 0.40 there was a change in the crystallization properties which changed according to the amount of doping of the Bi element. Based on the XRD results, the major phases were Ba4Bi(PbO4)3 with a tetragonal crystal structure and P4/mmm space group, and BaPbO3 with a cubic crystal structure and Pm-3m space group. The increase in the sintering temperature causes a change in the insulator-metal-insulator properties. In the variation of Bi composition, the evolution of phase formation of Ba4Bi(PbO4)3 starts at x = 0.20 and then decreases drastically when x = 0.40. TC was detected at a value of x less than 0.35, indicating that the effect of Bi composition below x = 0.35 does not significantly affect the electrical properties. The increase in the Bi composition causes changes in the metal-insulator-metal properties. At x = 0.2 to 0.25, there is a change in the crystal structure which is thought to cause the semiconductor properties to be above the TC.
AB - Bismuthate superconductor material has a transition from a semiconductor/conductor to a superconductor. Research on this transition temperature has attracted many researchers' attention to reveal this material's superconducting properties. We synthesized the materials by the solid-state reaction method. Samples were synthesized with variations in sintering temperature and also with variations in Bi-doping. X-ray diffractometer (XRD), scanning electron microscope (SEM), and resistivity versus temperature measurements were used to analyse the crystal structure, morphology, and electrical characteristics, respectively. Based on SEM results, there were no significant changes with the increase in sintering temperature. However, from x = 0 to 0.40 there was a change in the crystallization properties which changed according to the amount of doping of the Bi element. Based on the XRD results, the major phases were Ba4Bi(PbO4)3 with a tetragonal crystal structure and P4/mmm space group, and BaPbO3 with a cubic crystal structure and Pm-3m space group. The increase in the sintering temperature causes a change in the insulator-metal-insulator properties. In the variation of Bi composition, the evolution of phase formation of Ba4Bi(PbO4)3 starts at x = 0.20 and then decreases drastically when x = 0.40. TC was detected at a value of x less than 0.35, indicating that the effect of Bi composition below x = 0.35 does not significantly affect the electrical properties. The increase in the Bi composition causes changes in the metal-insulator-metal properties. At x = 0.2 to 0.25, there is a change in the crystal structure which is thought to cause the semiconductor properties to be above the TC.
KW - BaBi(PbO), BaPbO
KW - Bi-doping
KW - Critical temperature
KW - Sintering temperature
KW - Superconductor
UR - http://www.scopus.com/inward/record.url?scp=85167400172&partnerID=8YFLogxK
U2 - 10.1016/j.sajce.2023.07.014
DO - 10.1016/j.sajce.2023.07.014
M3 - Article
AN - SCOPUS:85167400172
SN - 1026-9185
VL - 46
SP - 112
EP - 121
JO - South African Journal of Chemical Engineering
JF - South African Journal of Chemical Engineering
ER -