Abstract
Cu2ZnSnS4(CZTS) thin films fabricated by successive ionic layer adsorption and reaction (SILAR) method is a promising combination to actualize a low cost thin films Solar Cell (TFSC). Ionic exchange and rinsing time are critical point for ionic layer formation in SILAR method. The purpose of this study is to investigate the influence of cationic and anionic immersing time on the band gap energy of CZTS. Immersing time was varied into 10, 20, 30 and 40 seconds for both deposited and annealed samples, which annealing was conducted on 300°C for two hours. Deposited results showed a linear increase on band gap energy as cationic immersing time extended. Whereas, nonlinear increment with optimum band gap 1.35eV at 30 seconds immersion happened for anionic time variation samples. Annealed CZTS with cationic time variation also showed a linear increasing band gap. Meanwhile, annealed with anionic time variation showed a backward tendency of the deposited samples which the band gap decrease nonlinearly as anionic immersing time lengthened.
| Original language | English |
|---|---|
| Article number | 012030 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 547 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 5 Sept 2019 |
| Event | 1st International Conference on Design and Application of Engineering Materials 2018, IC-DAEM 2018 in conjunction with 11th Seminar Nasional Metalurgi dan Material, SENAMM 2018 - Bandung, Indonesia Duration: 6 Sept 2018 → 7 Sept 2018 |
Keywords
- band gap energy
- CZTS
- Semiconductor
- SILAR