Effects of growth temperature on crystal structure, electrical, and photoluminescence of ZnO thin films

Iwan Sugihartono, Bambang Soegijono, M. Hikam, E. Handoko, H. M. Fan, S. T. Tan, X. W. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolisis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase monotonically with increasing temperature. We believed that the ZnO thin films quality improved by increasing growth temperature.

Original languageEnglish
Title of host publication2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013
Subtitle of host publicationThe 2nd International Conference on Civic Space
Pages232-234
Number of pages3
DOIs
Publication statusPublished - 18 Dec 2013
Event2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013 - Yogyakarta, Indonesia
Duration: 25 Jun 201328 Jun 2013

Publication series

Name2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013: The 2nd International Conference on Civic Space

Conference

Conference2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013
Country/TerritoryIndonesia
CityYogyakarta
Period25/06/1328/06/13

Keywords

  • Growth temperature
  • Hall measurement
  • PL
  • XRD
  • ZnO thin films

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