Effects of doping on structural change and hydrogen bonding in laser crystallized polycrystalline silicon films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Doped polycrystalline silicon films were produced by employing a step-by-step laser crystallization of doped hydrogenated amorphous silicon (a-Si:H). The influence of laser crystallization on structural properties and hydrogen bonding were investigated using Raman backscattering spectroscopy and hydrogen effusion measurements. Crystallization with low laser fluence, E L, results a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. In fully crystallized polycrystalline silicon the Raman lines in both P- and B-doped specimens are asymmetric, which is indicative of the Fano effect. From the hydrogen effusion spectra, the hydrogen density-of-states distribution is derived. Laser crystallization results in an increase of the hydrogen binding energy by about 0.2-0.3 eV compared to the amorphous starting material.

Original languageEnglish
Pages (from-to)3847-3853
Number of pages7
JournalThin Solid Films
Volume515
Issue number7-8
DOIs
Publication statusPublished - 26 Feb 2007

Keywords

  • Doped polycrystalline silicon
  • Hydrogen bonding
  • Hydrogen density-of-states
  • Hydrogen effusion
  • Laser crystallization
  • Raman spectroscopy

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