Effect of Gauss doping profile on electric potential of p-n diode

A. A.N.Gde Sapteka, T. Abuzairi, D. Hartanto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study aimed to determine the effects of Gauss doping profile on electric potential of p-n diode. This effect is studied by simulating PN diodes at equilibrium condition with differences in doping fall-off constant (dfc) using MATLAB and COMSOL software. According to the simulation results, it concluded that p-n diode with different Gaussian doping profile, will produce similar built-in voltage (VGbi). But, each p-n diode with different Gaussian doping profile, has different maximum junction voltage (V jmax) and minimum junction voltage (Vjmin). These junction voltages have strong correlation with dfc. We propose an equation of built-in voltage for Gauss Doping Profile, and also equations of Vjmax and Vjmin

Original languageEnglish
Title of host publication2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013
Subtitle of host publicationThe 2nd International Conference on Civic Space
Pages226-231
Number of pages6
DOIs
Publication statusPublished - 2013
Event2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013 - Yogyakarta, Indonesia
Duration: 25 Jun 201328 Jun 2013

Publication series

Name2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013: The 2nd International Conference on Civic Space

Conference

Conference2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013
Country/TerritoryIndonesia
CityYogyakarta
Period25/06/1328/06/13

Keywords

  • Electric Potential
  • Gauss Doping Profile
  • p-n Diode

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