Design of GaN based optical modulator with mach-zehnder interferometer structure

In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, resulting refractive index for the GaN layers were found to be nTE=2.279±0.001 and nTM = 2.316±0.001 and good temperatur stability. Optimization of the structure parameters and electrodes required for this structure was conducted accurately by theoretical tools using BPM methods. The results showed possibility to realize GaN based MZI for future optical modulator devices.