Design of concurrent multiband inductive degeneration low noise amplifier with LC resonator

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

In this research, the concurrent multiband LNA that works at four frequency centers of 950 MHz, 1.85 GHz, 2.35 GHz, and 2.65 GHz will be designed and analyzed. The multiband LNA uses transistor HJ-FET NE3210S01 in cascode structure with self bias and inductive degeneration topology with resonator LC. The performances of multiband LNA are simulated by Advance Design System (ADS). It is shown from the simulation results that, at four frequency centers of 950 MHz, 1.85 GHz, 2.35 GHz, and 2.65 GHz, the S21 achieves 21.77 dB, 17.88 dB, 16.71 dB, and 15.85 dB respectively, the S11 achieves -23.23 dB, -20.46 dB, -17.93 dB, and -19.69 dB respectively, the NF achieves 0.73 dB, 0.69 dB, 0.68 dB and 0.75 dB respectively.

Original languageEnglish
Title of host publicationProceeding - IEEE COMNETSAT 2013
Subtitle of host publicationIEEE International Conference on Communication, Networks and Satellite
PublisherIEEE Computer Society
Pages115-119
Number of pages5
ISBN (Print)9781467360562
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference on Communication, Networks and Satellite, IEEE COMNETSAT 2013 - Yogyakarta, Indonesia
Duration: 3 Dec 20134 Dec 2013

Publication series

NameProceeding - IEEE COMNETSAT 2013: IEEE International Conference on Communication, Networks and Satellite

Conference

Conference2013 IEEE International Conference on Communication, Networks and Satellite, IEEE COMNETSAT 2013
Country/TerritoryIndonesia
CityYogyakarta
Period3/12/134/12/13

Keywords

  • Concurrent multiband LNA
  • LC resonator
  • inductive degeneration

Fingerprint

Dive into the research topics of 'Design of concurrent multiband inductive degeneration low noise amplifier with LC resonator'. Together they form a unique fingerprint.

Cite this