TY - JOUR
T1 - Coulomb-blockade transport in selectively-doped Si nano-transistors
AU - Afiff, Adnan
AU - Samanta, Arup
AU - Udhiarto, Arief
AU - Sudibyo, Harry
AU - Hori, Masahiro
AU - Ono, Yukinori
AU - Tabe, Michiharu
AU - Moraru, Daniel
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.
AB - Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.
UR - http://www.scopus.com/inward/record.url?scp=85071185172&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab2cd7
DO - 10.7567/1882-0786/ab2cd7
M3 - Article
AN - SCOPUS:85071185172
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 085004
ER -