TY - JOUR
T1 - Coulomb-blockade transport in selectively-doped Si nano-transistors
AU - Afiff, Adnan
AU - Samanta, Arup
AU - Udhiarto, Arief
AU - Sudibyo, Harry
AU - Hori, Masahiro
AU - Ono, Yukinori
AU - Tabe, Michiharu
AU - Moraru, Daniel
N1 - Funding Information:
We thank T. Mizuno, Y. Takasu, T. Tsutaya for their support in device fabrication. Useful discussions with M. Hasan, G. Prabhudesai and K. Yamaguchi are acknowledged. We also thank D. Hartanto for support and helpful discussions. This work was partially supported by a Grant-in-Aid for Scientific Research (no. 26820127, 19K04529, 16H02339, and 17H06211) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.
AB - Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.
UR - http://www.scopus.com/inward/record.url?scp=85071185172&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab2cd7
DO - 10.7567/1882-0786/ab2cd7
M3 - Article
AN - SCOPUS:85071185172
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 8
M1 - 085004
ER -