Coulomb-blockade transport in selectively-doped Si nano-transistors

Adnan Afiff; Arup Samanta; Arief Udhiarto; Harry Sudibyo; Masahiro Hori; Yukinori Ono; Michiharu Tabe; Daniel Moraru

doi:10.7567/1882-0786/ab2cd7

Coulomb-blockade transport in selectively-doped Si nano-transistors

Adnan Afiff, Arup Samanta, Arief Udhiarto, Harry Sudibyo, Masahiro Hori, Yukinori Ono, Michiharu Tabe, Daniel Moraru

Department of Electrical Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.

Original language	English
Article number	085004
Journal	Applied Physics Express
Volume	12
Issue number	8
DOIs	https://doi.org/10.7567/1882-0786/ab2cd7
Publication status	Published - 1 Jan 2019

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Afiff, A., Samanta, A., Udhiarto, A., Sudibyo, H., Hori, M., Ono, Y., Tabe, M., & Moraru, D. (2019). Coulomb-blockade transport in selectively-doped Si nano-transistors. Applied Physics Express, 12(8), [085004]. https://doi.org/10.7567/1882-0786/ab2cd7

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abstract = "Coulomb-blockade transport via donors working as quantum dots (QDs) in Si nano-transistor channels opens new pathways for atomic-level applications, but position-control of such QDs remains challenging. Here, we demonstrate that multiple-donor cluster-QDs can be formed by CMOS-compatible selective-doping, as observed from Coulomb-blockade transport at low temperature (T = 5.5 K). While at high gate voltage electron tunneling takes place via extended QDs, likely due to line edge roughness of the nanoscale channel, at low gate voltage tunneling occurs via a cluster of intentionally-doped donors. For the interpretation, we introduce a model of an isolated donor-cluster as a QD with voltage-dependent tunnel resistances.",

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AU - Afiff, Adnan

AU - Samanta, Arup

AU - Udhiarto, Arief

AU - Sudibyo, Harry

AU - Hori, Masahiro

AU - Ono, Yukinori

AU - Tabe, Michiharu

AU - Moraru, Daniel

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