@inproceedings{f293c84872d641a8b1cf30c75baa01a6,
title = "Broadband highly linear high isolation SPDT switch IC with floating body technique in 180-nm CMOS",
abstract = "This paper presents a broadband single-pole double-throw (SPDT) switch IC in a 180-nm CMOS process. Floating body technique and stacked nMOSFETs are utilized to improve the power handling capability and isolation performance. The fabricated SPDT switch IC has exhibited an input referred 0.5-dB compression point of 21.8 dBm, an isolation of 42.4 dB and an insertion loss of 1.2 dB for transmit mode at an operation frequency of 5.0 GHz. The SPDT switch IC has an insertion loss of 2.1 dB and a return loss of 10.6 dB for receive mode at 5.0 GHz.",
keywords = "SPDT switch IC, floating body technique, high isolation, stacked transistor, wideband",
author = "Xiao Xu and Xin Yang and Kurniawan, {Taufiq Alif} and Toshihiko Yoshimasu",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",
year = "2015",
month = sep,
day = "30",
doi = "10.1109/EDSSC.2015.7285200",
language = "English",
series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "653--655",
booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",
address = "United States",
}