Boron doped polycrystalline silicon produced by step-by-step XeCl excimer laser crystallization

Rosari Saleh, Norbert H. Nickel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A series of boron doped polycrystalline silicon were produced using step-by-step laser crystallization process from amorphous silicon. The influence of doping concentrations on laser-induced dehydrogenation and crystallization of amorphous silicon and on hydrogen bonding have been investigated employing Raman spectroscopy and hydrogen effusion measurements. From hydrogen effusion spectra the hydrogen chemical potential is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages635-640
Number of pages6
Publication statusPublished - 12 Jun 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 18 Apr 200621 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume910
ISSN (Print)0272-9172

Conference

Conference2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period18/04/0621/04/06

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