Band gap optimization by Ga and S additions in CuInSe 2 for solar cell absorber applications

Badrul Munir, Kim Kyoo Ho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Gallium or sulphur additions in CuInSe 2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

Original languageEnglish
Title of host publicationMechanical and Aerospace Engineering
Pages1176-1180
Number of pages5
DOIs
Publication statusPublished - 1 Jan 2012
Event2nd International Conference on Mechanical and Aerospace Engineering, ICMAE 2011 - Bangkok, Thailand
Duration: 29 Jul 201131 Jul 2011

Publication series

NameApplied Mechanics and Materials
Volume110-116
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

Conference2nd International Conference on Mechanical and Aerospace Engineering, ICMAE 2011
CountryThailand
CityBangkok
Period29/07/1131/07/11

Keywords

  • Band gap
  • CuInSe
  • PLD
  • Solar cells
  • Sputtering
  • Thin films

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