@inproceedings{5994cd389e7445efa23f23a91b7ea6eb,
title = "Band gap optimization by Ga and S additions in CuInSe 2 for solar cell absorber applications",
abstract = "Gallium or sulphur additions in CuInSe 2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.",
keywords = "Band gap, CuInSe, PLD, Solar cells, Sputtering, Thin films",
author = "Badrul Munir and Ho, {Kim Kyoo}",
year = "2012",
doi = "10.4028/www.scientific.net/AMM.110-116.1176",
language = "English",
isbn = "9783037852620",
series = "Applied Mechanics and Materials",
pages = "1176--1180",
booktitle = "Mechanical and Aerospace Engineering",
note = "2nd International Conference on Mechanical and Aerospace Engineering, ICMAE 2011 ; Conference date: 29-07-2011 Through 31-07-2011",
}