Atom devices based on single dopants in silicon nanostructures

Daniel Moraru, Arief Udhiarto, Miftahul Anwar, Roland Nowak, Ryszard Jablonski, Earfan Hamid, Juli Cha Tarido, Takeshi Mizuno, Michiharu Tabe

Research output: Contribution to journalReview articlepeer-review

56 Citations (Scopus)

Abstract

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

Original languageEnglish
Article number479
Pages (from-to)1-9
Number of pages9
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 1 Dec 2011

Keywords

  • Double-donor systems
  • Kelvin probe force microscopy
  • Multiple-donor systems
  • Photon
  • Silicon-on-insulator field-effect transistor
  • Single-dopant electronics
  • Single-electron tunneling

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