This paper presents an area-changed capacitive accelerometer using a 3-mask fabrication process. The accelerometer is designed as finger structures connected in parallel that have a differential capacitor arrangement. The movable electrodes are mounted on a proof mass of silicon and a pair of stationary electrodes of polysilicon is formed under the mass with a 3 μm air gap. The fabrication process utilizes silicon/glass anodic bonding and deep reactive ion etching (DRIE) for high aspect ratio etching. The simulated mass displacement change rate is 0.076 μm/g and the overall sensitivity is -0.04/μm. This type of accelerometer will be characterized for low-g as well as for medium-g applications.
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 1 Jun 2004|
|Event||Device and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia|
Duration: 10 Dec 2003 → 12 Dec 2003
- Wafer bonding