Area-changed capacitive accelerometer using 3-mask fabrication process

Burhanuddin Yeop Majlis, Badariah Bais, Agus Santoso Tamsir

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


This paper presents an area-changed capacitive accelerometer using a 3-mask fabrication process. The accelerometer is designed as finger structures connected in parallel that have a differential capacitor arrangement. The movable electrodes are mounted on a proof mass of silicon and a pair of stationary electrodes of polysilicon is formed under the mass with a 3 μm air gap. The fabrication process utilizes silicon/glass anodic bonding and deep reactive ion etching (DRIE) for high aspect ratio etching. The simulated mass displacement change rate is 0.076 μm/g and the overall sensitivity is -0.04/μm. This type of accelerometer will be characterized for low-g as well as for medium-g applications.

Original languageEnglish
Pages (from-to)482-488
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2004
EventDevice and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia
Duration: 10 Dec 200312 Dec 2003


  • Area-changed
  • DRIE
  • Fabrication
  • MEMS
  • Microaccelerometer
  • Wafer bonding


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