Analysis and Modelling of the LPCVD Annular Reactor

Setijo Bismo; P. Duverneuil; L. Pibouleau; S. Domenech; J. P. Couderc

doi:10.1080/10426919508935019

Analysis and Modelling of the LPCVD Annular Reactor

Setijo Bismo, P. Duverneuil, L. Pibouleau, S. Domenech, J. P. Couderc

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper presents the results of our work on a new type of CVD reactor, annular reactor. This equipment is able to deposit pure silicon and also in-situ phosphorus doped silicon on a large number of substrates.

Original language	English
Pages (from-to)	241-266
Number of pages	26
Journal	Materials and Manufacturing Processes
Volume	10
Issue number	2
DOIs	https://doi.org/10.1080/10426919508935019
Publication status	Published - 1 Mar 1995

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10.1080/10426919508935019

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AU - Couderc, J. P.

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Analysis and Modelling of the LPCVD Annular Reactor

Abstract

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