A Statistical Study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors

Adnan Afiff, Tarik Hasan, Michiharu Tabe, Daniel Moraru, Adnan Afiff, Arief Udhiarto, Harry Sudibyo S., Djoko Hartanto, Arup Samanta, Manoharan Muruganathan, Hiroshi Mizuta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional dopant-atom has usually a shallow ground state energy level below the conduction band edge (∼45 meV). This means that the tunnel barrier is relatively low and thermally-activated current can flow over the barrier. Therefore, the operation of dopant-atom SET transistors remains limited to low temperatures. In this work, we statistically analyze the key factors for raising the SET operation temperature up to room temperature (>300 K).

Original languageEnglish
Title of host publicationQiR 2017 - 2017 15th International Conference on Quality in Research (QiR)
Subtitle of host publicationInternational Symposium on Electrical and Computer Engineering
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages74-78
Number of pages5
ISBN (Electronic)9781509063970
DOIs
Publication statusPublished - 5 Dec 2017
Event15th International Conference on Quality in Research: International Symposium on Electrical and Computer Engineering, QiR 2017 - Nusa Dua, Bali, Indonesia
Duration: 24 Jul 201727 Jul 2017

Publication series

NameQiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering
Volume2017-December

Conference

Conference15th International Conference on Quality in Research: International Symposium on Electrical and Computer Engineering, QiR 2017
CountryIndonesia
CityNusa Dua, Bali
Period24/07/1727/07/17

Keywords

  • dopant-induced quantum dot
  • high doping concentration
  • room temperature
  • silicon nanodevices
  • single-electron transistor

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