TY - GEN
T1 - A Statistical Study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors
AU - Afiff, Adnan
AU - Hasan, Tarik
AU - Tabe, Michiharu
AU - Moraru, Daniel
AU - Afiff, Adnan
AU - Udhiarto, Arief
AU - S., Harry Sudibyo
AU - Hartanto, Djoko
AU - Samanta, Arup
AU - Muruganathan, Manoharan
AU - Mizuta, Hiroshi
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/12/5
Y1 - 2017/12/5
N2 - Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional dopant-atom has usually a shallow ground state energy level below the conduction band edge (∼45 meV). This means that the tunnel barrier is relatively low and thermally-activated current can flow over the barrier. Therefore, the operation of dopant-atom SET transistors remains limited to low temperatures. In this work, we statistically analyze the key factors for raising the SET operation temperature up to room temperature (>300 K).
AB - Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional dopant-atom has usually a shallow ground state energy level below the conduction band edge (∼45 meV). This means that the tunnel barrier is relatively low and thermally-activated current can flow over the barrier. Therefore, the operation of dopant-atom SET transistors remains limited to low temperatures. In this work, we statistically analyze the key factors for raising the SET operation temperature up to room temperature (>300 K).
KW - dopant-induced quantum dot
KW - high doping concentration
KW - room temperature
KW - silicon nanodevices
KW - single-electron transistor
UR - http://www.scopus.com/inward/record.url?scp=85045978500&partnerID=8YFLogxK
U2 - 10.1109/QIR.2017.8168455
DO - 10.1109/QIR.2017.8168455
M3 - Conference contribution
AN - SCOPUS:85045978500
T3 - QiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering
SP - 74
EP - 78
BT - QiR 2017 - 2017 15th International Conference on Quality in Research (QiR)
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th International Conference on Quality in Research: International Symposium on Electrical and Computer Engineering, QiR 2017
Y2 - 24 July 2017 through 27 July 2017
ER -