A preparation to fabricate basic long wavelength optical devices using LPE

Agus Santoso Tamsir; D. Hartanto; S. E. Yumin; M. R.T. Siregar

A preparation to fabricate basic long wavelength optical devices using LPE

Agus Santoso Tamsir, D. Hartanto, S. E. Yumin, M. R.T. Siregar

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.

Original language	English
Pages	605-608
Number of pages	4
Publication status	Published - 1997
Event	7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore Duration: 10 Sept 1997 → 12 Sept 1997

Conference

Conference	7th International Symposium on IC Technology, Systems and Applications ISIC 97
Country/Territory	Singapore
City	Singapore
Period	10/09/97 → 12/09/97

Cite this

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title = "A preparation to fabricate basic long wavelength optical devices using LPE",

abstract = "The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.",

author = "Tamsir, {Agus Santoso} and D. Hartanto and Yumin, {S. E.} and Siregar, {M. R.T.}",

year = "1997",

language = "English",

pages = "605--608",

note = "7th International Symposium on IC Technology, Systems and Applications ISIC 97 ; Conference date: 10-09-1997 Through 12-09-1997",

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TY - CONF

T1 - A preparation to fabricate basic long wavelength optical devices using LPE

AU - Tamsir, Agus Santoso

AU - Hartanto, D.

AU - Yumin, S. E.

AU - Siregar, M. R.T.

PY - 1997

Y1 - 1997

N2 - The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.

AB - The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.

UR - http://www.scopus.com/inward/record.url?scp=1842728732&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842728732

SP - 605

EP - 608

T2 - 7th International Symposium on IC Technology, Systems and Applications ISIC 97

Y2 - 10 September 1997 through 12 September 1997

ER -

A preparation to fabricate basic long wavelength optical devices using LPE

Abstract

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