The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.
|Number of pages||4|
|Publication status||Published - 1 Dec 1997|
|Event||7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore|
Duration: 10 Sep 1997 → 12 Sep 1997
|Conference||7th International Symposium on IC Technology, Systems and Applications ISIC 97|
|Period||10/09/97 → 12/09/97|