A preparation to fabricate basic long wavelength optical devices using LPE

Agus Santoso Tamsir, D. Hartanto, S. E. Yumin, M. R.T. Siregar

Research output: Contribution to conferencePaperpeer-review

Abstract

The fabrication of photonic device using LPE (Liquid Phase Epitaxy) particularly for long wavelength needs some precision controlling parameters to yield good performance. In this paper we focus on some parameters particularly for first growth fabrication such as weighting composition and thickness of GaInAsP layer, single-mode vertical field distribution of lightwave, vertical optical confinement factor (VOCF), and threshold current. An empirical equation is made for the two first of parameters above with 1.647 % (for InAs) and 1.235 % (for GaAs) deviation comparing with Tabatabaie et.al approach. And the two second parameters in fact is helpful to control the single-mode requirements. The fifth parameter is also useful to setup the low bias current on the photonic device.

Original languageEnglish
Pages605-608
Number of pages4
Publication statusPublished - 1 Dec 1997
Event7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore
Duration: 10 Sep 199712 Sep 1997

Conference

Conference7th International Symposium on IC Technology, Systems and Applications ISIC 97
CountrySingapore
CitySingapore
Period10/09/9712/09/97

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