A new SiC/HfB2 based low power gas sensor

F. Solzbacher, Cuk Imawan, H. Steffes, E. Obermeier, M. Eickhoff

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

A new SiC-based heated micro gas sensor with a 100 μm × 100 μm heated membrane and excellent heater long-term stability is presented. Combining a previously presented micro hotplate with new gas sensitive (211) oriented In2O3 thin film layers yields a very stable low power NO2 gas sensor. The modular design allows its operation at operating voltages of either 1-2 or 12-24 V for battery and grid powered automotive applications. A total of 20 mW of power is sufficient for the operation at 250°C. The sensitivity and signal reproducibility in the MAK-range (5 ppm, maximum workplace concentration according to German federal law) is good. The response time τ50 = 50 s needs improvement.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume77
Issue number1-2
DOIs
Publication statusPublished - 15 Jun 2001

Keywords

  • Gas sensors
  • HfB
  • Indium oxide
  • Micro hotplate
  • SiC

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