A modular system of SiC-based microhotplates with integrated IDC for the use in metal oxide gas sensors is presented. Basic building block of the sensors is a 1 μm thick polycrystalline 3C-SiC membrane, which acts as supporting structure. A 200 nm thick HfB2 thin film heater with a de-resistance of about 12 Ω (1-2 V operating voltage) or alternatively an N-doped area in the SiC-membrane (12 V operating voltage) is used as hotplate. The active part of the membrane is separated from the surrounding membrane by six SiC-microbridges of 150 μm length and widths of 10, 20 and 40 μm. The heater is designed for operating temperatures up to 700°C and can be operated at about 400°C with a power of 35 mW.
|Number of pages||7|
|Journal||Sensors and Actuators, B: Chemical|
|Publication status||Published - 10 Jun 2000|
|Event||Transducers '99 - 10th International Conference on Solid-State Sensors and Actuators - Sendai, Japan|
Duration: 7 Jun 1999 → 10 Jun 1999
- Gas sensors
- Metal oxides