A modular system of SiC-based microhotplates for the application in metal oxide gas sensors

F. Solzbacher; C. Imawan; H. Steffes; E. Obermeier; H. Möller

doi:10.1016/S0925-4005(99)00490-6

A modular system of SiC-based microhotplates for the application in metal oxide gas sensors

F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, H. Möller

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

35 Citations (Scopus)

Abstract

A modular system of SiC-based microhotplates with integrated IDC for the use in metal oxide gas sensors is presented. Basic building block of the sensors is a 1 μm thick polycrystalline 3C-SiC membrane, which acts as supporting structure. A 200 nm thick HfB₂ thin film heater with a de-resistance of about 12 Ω (1-2 V operating voltage) or alternatively an N-doped area in the SiC-membrane (12 V operating voltage) is used as hotplate. The active part of the membrane is separated from the surrounding membrane by six SiC-microbridges of 150 μm length and widths of 10, 20 and 40 μm. The heater is designed for operating temperatures up to 700°C and can be operated at about 400°C with a power of 35 mW.

Original language	English
Pages (from-to)	95-101
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	64
Issue number	1-3
DOIs	https://doi.org/10.1016/S0925-4005(99)00490-6
Publication status	Published - 10 Jun 2000
Event	Transducers '99 - 10th International Conference on Solid-State Sensors and Actuators - Sendai, Japan Duration: 7 Jun 1999 → 10 Jun 1999

Keywords

Gas sensors
Metal oxides
Microhotplate
SiC

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10.1016/S0925-4005(99)00490-6

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title = "A modular system of SiC-based microhotplates for the application in metal oxide gas sensors",

abstract = "A modular system of SiC-based microhotplates with integrated IDC for the use in metal oxide gas sensors is presented. Basic building block of the sensors is a 1 μm thick polycrystalline 3C-SiC membrane, which acts as supporting structure. A 200 nm thick HfB2 thin film heater with a de-resistance of about 12 Ω (1-2 V operating voltage) or alternatively an N-doped area in the SiC-membrane (12 V operating voltage) is used as hotplate. The active part of the membrane is separated from the surrounding membrane by six SiC-microbridges of 150 μm length and widths of 10, 20 and 40 μm. The heater is designed for operating temperatures up to 700°C and can be operated at about 400°C with a power of 35 mW.",

keywords = "Gas sensors, Metal oxides, Microhotplate, SiC",

author = "F. Solzbacher and C. Imawan and H. Steffes and E. Obermeier and H. M{\"o}ller",

note = "Funding Information: The authors would like to thank Dr. Skorupa at Forschungszentrum Rossendorf for performing the high temperature ion implantations. Financial support through the German Ministry of Education, Research and Technology BMBF is gratefully acknowledged. ; Transducers '99 - 10th International Conference on Solid-State Sensors and Actuators ; Conference date: 07-06-1999 Through 10-06-1999",

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doi = "10.1016/S0925-4005(99)00490-6",

language = "English",

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T1 - A modular system of SiC-based microhotplates for the application in metal oxide gas sensors

AU - Solzbacher, F.

AU - Imawan, C.

AU - Steffes, H.

AU - Obermeier, E.

AU - Möller, H.

N1 - Funding Information: The authors would like to thank Dr. Skorupa at Forschungszentrum Rossendorf for performing the high temperature ion implantations. Financial support through the German Ministry of Education, Research and Technology BMBF is gratefully acknowledged.

PY - 2000/6/10

Y1 - 2000/6/10

N2 - A modular system of SiC-based microhotplates with integrated IDC for the use in metal oxide gas sensors is presented. Basic building block of the sensors is a 1 μm thick polycrystalline 3C-SiC membrane, which acts as supporting structure. A 200 nm thick HfB2 thin film heater with a de-resistance of about 12 Ω (1-2 V operating voltage) or alternatively an N-doped area in the SiC-membrane (12 V operating voltage) is used as hotplate. The active part of the membrane is separated from the surrounding membrane by six SiC-microbridges of 150 μm length and widths of 10, 20 and 40 μm. The heater is designed for operating temperatures up to 700°C and can be operated at about 400°C with a power of 35 mW.

AB - A modular system of SiC-based microhotplates with integrated IDC for the use in metal oxide gas sensors is presented. Basic building block of the sensors is a 1 μm thick polycrystalline 3C-SiC membrane, which acts as supporting structure. A 200 nm thick HfB2 thin film heater with a de-resistance of about 12 Ω (1-2 V operating voltage) or alternatively an N-doped area in the SiC-membrane (12 V operating voltage) is used as hotplate. The active part of the membrane is separated from the surrounding membrane by six SiC-microbridges of 150 μm length and widths of 10, 20 and 40 μm. The heater is designed for operating temperatures up to 700°C and can be operated at about 400°C with a power of 35 mW.

KW - Gas sensors

KW - Metal oxides

KW - Microhotplate

KW - SiC

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U2 - 10.1016/S0925-4005(99)00490-6

DO - 10.1016/S0925-4005(99)00490-6

M3 - Conference article

AN - SCOPUS:0010992796

SN - 0925-4005

VL - 64

SP - 95

EP - 101

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1-3

T2 - Transducers '99 - 10th International Conference on Solid-State Sensors and Actuators

Y2 - 7 June 1999 through 10 June 1999

ER -

A modular system of SiC-based microhotplates for the application in metal oxide gas sensors

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Keywords

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