A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan; Xin Yang; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

Original language	English
Title of host publication	European Microwave Week 2015
Subtitle of host publication	"Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	219-222
Number of pages	4
ISBN (Electronic)	9782874870392
DOIs	https://doi.org/10.1109/EuMC.2015.7345739
Publication status	Published - 2 Dec 2015
Event	45th European Microwave Conference, EuMC 2015 - Paris, France Duration: 7 Sep 2015 → 10 Sep 2015

Publication series

Name	European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC

Conference

Conference	45th European Microwave Conference, EuMC 2015
Country/Territory	France
City	Paris
Period	7/09/15 → 10/09/15

Keywords

low voltage
parallel switching transistor
short range wireless applications
third harmonic tuning technique

Access to Document

10.1109/EuMC.2015.7345739

Cite this

Kurniawan, T. A., Yang, X., Xu, X., & Yoshimasu, T. (2015). A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC (pp. 219-222). [7345739] (European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2015.7345739

Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao et al. / A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 219-222 (European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC).

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title = "A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications",

abstract = "This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.",

keywords = "low voltage, parallel switching transistor, short range wireless applications, third harmonic tuning technique",

author = "Kurniawan, {Taufiq Alif} and Xin Yang and Xiao Xu and Toshihiko Yoshimasu",

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year = "2015",

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doi = "10.1109/EuMC.2015.7345739",

language = "English",

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Kurniawan, TA, Yang, X, Xu, X & Yoshimasu, T 2015, A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. in European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC., 7345739, European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC, Institute of Electrical and Electronics Engineers Inc., pp. 219-222, 45th European Microwave Conference, EuMC 2015, Paris, France, 7/09/15. https://doi.org/10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao et al.

European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. p. 219-222 7345739 (European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kurniawan, Taufiq Alif

AU - Yang, Xin

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2015/12/2

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N2 - This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

AB - This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

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KW - parallel switching transistor

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KW - third harmonic tuning technique

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Kurniawan TA, Yang X, Xu X, Yoshimasu T. A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc. 2015. p. 219-222. 7345739. (European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC). doi: 10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

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