@inproceedings{fb7fc969944946dcaa2331050985711b,
title = "A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS",
abstract = "A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4\% at a 1.0 V power supply.",
keywords = "CMOS, Class-E, Low-voltage, Power amplifier, Short range communications",
author = "Xiao Xu and Zheng Sun and Kangyang Xu and Xin Yang and Kurniawan, \{Taufiq Alif\} and Toshihiko Yoshimasu",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 ; Conference date: 27-08-2014 Through 30-08-2014",
year = "2014",
month = oct,
day = "21",
doi = "10.1109/RFIT.2014.6933241",
language = "English",
series = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology",
address = "United States",
}