A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-μm CMOS

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Nobuyuki Itoh, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.

Original languageEnglish
Title of host publication2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479975211
DOIs
Publication statusPublished - 9 Jun 2015
Event2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015 - Cocoa Beach, United States
Duration: 13 Apr 201515 Apr 2015

Publication series

Name2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015

Conference

Conference2015 16th IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2015
Country/TerritoryUnited States
CityCocoa Beach
Period13/04/1515/04/15

Keywords

  • Back-gate voltage
  • High efficiency
  • Low supply voltage
  • Third harmonic termination

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