A 2.5-Ghz 1-V high efficiency CMOS power amplifier IC with a dual-switching transistor and third harmonic tuning technique

Taufiq Alif Kurniawan, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents a 2.5-GHz low-voltage, high-efficiency CMOS power amplifier (PA) IC in 0.18-µm CMOS technology. The combination of a dual-switching transistor (DST) and a third harmonic tuning technique is proposed. The DST effectively improves the gain at the saturation power region when the additional gain extension of the secondary switching transistor compensates for the gain compression of the primary one. To achieve high-efficiency performance, the third harmonic tuning circuit is connected in parallel to the output load. Therefore, the flattened drain current and voltage waveforms are generated, which in turn reduce the overlapping and the dc power consumption significantly. In addition, a 0.5-V back-gate voltage is applied to the primary switching transistor to realize the low-voltage operation. At 1 V of supply voltage, the proposed PA has achieved a power added efficiency (PAE) of 34.5% and a saturated output power of 10.1 dBm.

Original languageEnglish
Article number69
JournalElectronics (Switzerland)
Volume8
Issue number1
DOIs
Publication statusPublished - 1 Jan 2019

Keywords

  • CMOS power amplifier IC
  • Dual-switching transistor
  • High efficiency
  • Low voltage
  • Third harmonic tuning

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