A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

Taufiq Alif Kurniawan; Xin Yang; Zheng Sun; Xiao Xu; Toshihiko Yoshimasu

A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

Taufiq Alif Kurniawan, Xin Yang, Zheng Sun, Xiao Xu, Toshihiko Yoshimasu

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.

Original language	English
Title of host publication	2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	744-746
Number of pages	3
ISBN (Electronic)	9784902339314
Publication status	Published - 25 Mar 2014
Event	2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan Duration: 4 Nov 2014 → 7 Nov 2014

Publication series

Name	2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference	2014 Asia-Pacific Microwave Conference, APMC 2014
Country/Territory	Japan
City	Sendai
Period	4/11/14 → 7/11/14

Keywords

Back-gate voltage
Class-E amplifier
High efficiency
Low supply voltage

Cite this

Kurniawan, T. A., Yang, X., Sun, Z., Xu, X., & Yoshimasu, T. (2014). A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. In 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 744-746). [7067771] (2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{bdd5fba793f8471d92375603b77bc9a3,

title = "A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection",

abstract = "In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.",

keywords = "Back-gate voltage, Class-E amplifier, High efficiency, Low supply voltage",

author = "Kurniawan, {Taufiq Alif} and Xin Yang and Zheng Sun and Xiao Xu and Toshihiko Yoshimasu",

year = "2014",

month = mar,

day = "25",

language = "English",

series = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",

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Kurniawan, TA, Yang, X, Sun, Z, Xu, X & Yoshimasu, T 2014, A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. in 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014., 7067771, 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 744-746, 2014 Asia-Pacific Microwave Conference, APMC 2014, Sendai, Japan, 4/11/14.

A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. / Kurniawan, Taufiq Alif; Yang, Xin; Sun, Zheng et al.

2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 744-746 7067771 (2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

AU - Kurniawan, Taufiq Alif

AU - Yang, Xin

AU - Sun, Zheng

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2014/3/25

Y1 - 2014/3/25

N2 - In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.

AB - In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.

KW - Back-gate voltage

KW - Class-E amplifier

KW - High efficiency

KW - Low supply voltage

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M3 - Conference contribution

AN - SCOPUS:84988293831

T3 - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

SP - 744

EP - 746

BT - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Asia-Pacific Microwave Conference, APMC 2014

Y2 - 4 November 2014 through 7 November 2014

ER -

A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

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Keywords

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