A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection

Taufiq Alif Kurniawan, Xin Yang, Zheng Sun, Xiao Xu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages744-746
Number of pages3
ISBN (Electronic)9784902339314
Publication statusPublished - 25 Mar 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014

Publication series

Name2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period4/11/147/11/14

Keywords

  • Back-gate voltage
  • Class-E amplifier
  • High efficiency
  • Low supply voltage

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  • Cite this

    Kurniawan, T. A., Yang, X., Sun, Z., Xu, X., & Yoshimasu, T. (2014). A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. In 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 744-746). [7067771] (2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014). Institute of Electrical and Electronics Engineers Inc..