@inproceedings{bdd5fba793f8471d92375603b77bc9a3,
title = "A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection",
abstract = "In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.",
keywords = "Back-gate voltage, Class-E amplifier, High efficiency, Low supply voltage",
author = "Kurniawan, {Taufiq Alif} and Xin Yang and Zheng Sun and Xiao Xu and Toshihiko Yoshimasu",
note = "Publisher Copyright: Copyright 2014 IEICE.; 2014 Asia-Pacific Microwave Conference, APMC 2014 ; Conference date: 04-11-2014 Through 07-11-2014",
year = "2014",
month = mar,
day = "25",
language = "English",
series = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "744--746",
booktitle = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
address = "United States",
}