Abstract
In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.
| Original language | English |
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| Title of host publication | 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 744-746 |
| Number of pages | 3 |
| ISBN (Electronic) | 9784902339314 |
| Publication status | Published - 25 Mar 2014 |
| Event | 2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan Duration: 4 Nov 2014 → 7 Nov 2014 |
Publication series
| Name | 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 |
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Conference
| Conference | 2014 Asia-Pacific Microwave Conference, APMC 2014 |
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| Country | Japan |
| City | Sendai |
| Period | 4/11/14 → 7/11/14 |
Keywords
- Back-gate voltage
- Class-E amplifier
- High efficiency
- Low supply voltage
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Cite this
Kurniawan, T. A., Yang, X., Sun, Z., Xu, X., & Yoshimasu, T. (2014). A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection. In 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (pp. 744-746). [7067771] (2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014). Institute of Electrical and Electronics Engineers Inc..