TY - GEN
T1 - 3D EBAD characterizations on copper TSV for 3D interconnections
AU - Putra, W. N.
AU - Trigg, A. D.
AU - Li, H. Y.
AU - Gan, C. L.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/9/12
Y1 - 2014/9/12
N2 - Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99%, as compared with 55% and 67% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.
AB - Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99%, as compared with 55% and 67% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84908480556&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2014.6898181
DO - 10.1109/IPFA.2014.6898181
M3 - Conference contribution
AN - SCOPUS:84908480556
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 295
EP - 299
BT - Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014
Y2 - 30 June 2014 through 4 July 2014
ER -